Epitaxial III-V Films and Surfaces for Photoelectrocatalysis
نویسندگان
چکیده
منابع مشابه
The structure of epitaxial V 2 O 3 films and
Medium energy ion scattering (MEIS), using 100 keV H incident ions, has been used to investigate the growth of epitaxial films, up to thicknesses of ~200 Å, of V2O3 on both Pd(111) and Au(111). Scattered-ion energy spectra provide a measure of the average film thickness and the variations in this thickness, and show that, with suitable annealing, the crystalline quality is good. Plots of the sc...
متن کاملThe structure of epitaxial V 2 O 3 films and their surfaces : a medium energy ion scattering study
Medium energy ion scattering (MEIS), using 100 keV H incident ions, has been used to investigate the growth of epitaxial films, up to thicknesses of ~200 Å, of V2O3 on both Pd(111) and Au(111). Scattered-ion energy spectra provide a measure of the average film thickness and the variations in this thickness, and show that, with suitable annealing, the crystalline quality is good. Plots of the sc...
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The effect of built-in strain on IlI-V epitaxial semiconductors has been investigated by Diffraction Anomalous Fine Smcture (DAFS). We study two different systems in a different strain regime: a Strained Layer Superlattice of (GaP)2(InP)3 grown on a GaAs(001) substrate, and a single epilayer of G a A ~ l ~ p ~ , (x=0.225), also grown on a GaAs (001) substrate. In the first case the strain is ac...
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Epitaxial lift-off is used to create thin-film III-V solar cells without sacrificing the GaAs wafer. It is based on selective etching of an AlAs release layer between the wafer and the cell structure using an HF solution. The wafer can be reused for subsequent deposition runs thereby reducing the cost of the cells. The thin-film cell can be transferred to any new carrier, e.g. glass, plastic, s...
متن کاملEpitaxial III-V-on-silicon waveguide butt-coupled photodetectors.
We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 μA and a responsivity of 0.17 ...
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ژورنال
عنوان ژورنال: ChemPhysChem
سال: 2012
ISSN: 1439-4235
DOI: 10.1002/cphc.201200390